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The Applied Centura RP Epi offers a complete suite of Epi solutions for semiconductor manufacturing, from substrate formation to advanced logic and memory applications. The system enables strain engineering in logic through selective SiGe recessed source/drain to deliver exceptional drive current improvement. In DRAM, Centura RP Epi for elevated source/drain improves yield and retention time.
With a new optional pre-clean chamber, the Applied Centura RP Epi offers the first low-temperature, plasma-based, integrated pre-clean product for Epi applications, making true low-temperature Epi for leading-edge technologies practicable. Combining production-proven Siconi plasma dry clean technology and Applied’s leading Epi processes on one system eliminates the HF dip and subsequent high-temperature hydrogen bake steps that pose growing challenges as devices scale beyond 32nm. In addition, elimination of queue time control issues simplifies fab operations and reduces wafer scrap resulting from queue time limit violations.
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Protecting the integrity of sensitive features at sub-32nm nodes through low-temperature processing (<130°C maximum wafer temperature) and gentle remote plasma action, the Siconi pre-clean chamber also fulfills Epi specifications for metal contamination and particle performance, creating the pristine surfaces necessary for optimum post-clean Epi growth. Production-proven for pre-nickel silicide and contact cleans, the integrated pre-clean offers customers a safe enabler of the most advanced Epi applications.
Proprietary Epi chamber technology and a robust platform result in tight manufacturing process control and world-class production-worthiness.
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Enabling transistor performance
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Strain engineering significantly improves device performance. Applied Centura RP Epi delivers selective SiGe for recessed source/drain, proven to enhance PMOS drive currents >60% |
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When combined with compressive stress nitride etch stop layer, the additive benefits result in >85% drive current improvement |
Superior chamber technology
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Small chamber volume and proprietary dome design create the largest process window for 100% selective, facet-free Epi applications |
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Flexible tuning for dopant and thickness uniformity control |
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Optical pyrometry for superior temperature measurement and control |
Robust, high productivity platform
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Production-proven in Logic, DRAM and wafer manufacturing fabs |
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Vacuum batch load-locks for ambient control ensure high quality selective Epi growth |
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Configurable two- or four-chamber platform
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